A Study on Characteristics of Wet Oxide Gate and Nitride Oxide Gate for Fabrication of NMOSFET
The KIPS Transactions:PartA, Vol. 15, No. 4, pp. 211-216, Aug. 2008
10.3745/KIPSTA.2008.15.4.211, PDF Download:
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Cite this article
[IEEE Style]
H. S. Kim and C. H. Yi, "A Study on Characteristics of Wet Oxide Gate and Nitride Oxide Gate for Fabrication of NMOSFET," The KIPS Transactions:PartA, vol. 15, no. 4, pp. 211-216, 2008. DOI: 10.3745/KIPSTA.2008.15.4.211.
[ACM Style]
Hwan Seog Kim and Cheon Hee Yi. 2008. A Study on Characteristics of Wet Oxide Gate and Nitride Oxide Gate for Fabrication of NMOSFET. The KIPS Transactions:PartA, 15, 4, (2008), 211-216. DOI: 10.3745/KIPSTA.2008.15.4.211.