Dong Joo Park , Won Kyung Choi , Sang Won Lee

The KIPS Transactions:PartA, Vol. 12, No. 3, pp. 205-214, Jun. 2005
10.3745/KIPSTA.2005.12.3.205,   PDF Download:

Abstract

Flash memory is at high speed used as storage of personal information utilities, ubiquitous computing environments, mobile phones, electronic goods, etc. This is because flash memory has the characteristics of low electronic power, non-volatile storage, high performance, physical stability, portability, and so on. However, differently from hard disks, it has a weak point that overwrites on already written block of flash memory is impossible to be done. In order to make an overwrite possible, an erase operation on the written block should be performed before the overwrite, which lowersthe performance of flash memory highly. In order to solve this problem, the flash memory controller maintains a system software module called the flash translation layer(FTL). Of many proposed FTL schemes, the log block buffer scheme is best known so far.This scheme uses a small number of log blocks of flash memory as a write buffer, which reduces the number of erase operations by overwrites, leading to good performance. However, this scheme shows a weakness of low page usability of log blocks. In this paper, we propose an enhanced log block buffer scheme, FAST(Full Associative Sector Translation), which improves the page usability of each log block by fully associating sectors to be written by overwrites to the entire log blocks. We also show that our FAST scheme outperforms the log block buffer scheme.

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